SAMSUNG MZ-75E2T0B/AM

Samsung's innovative 3D V-NAND flash memory architecture breaks through density, performance, and endurance limitations of today's conventional planar NAND architecture. Samsung 3D V-NAND stacks 32 cell layers vertically resulting in higher density and better performance utilizing a smaller footprint.

Incredible Read/Write Speeds

Achieve incredible read/write performance to maximize your everyday computing experience with Samsung's TurboWrite technology. You can obtain up to 1.9x faster performance than the award-winning Samsung 840 EVO. The 850 EVO delivers class-leading performance* in sequential read (540MB/s) and write (520MB/s) speeds. Plus, gain optimized random performance in all QD for better real-world performance.

Enhanced RAPID mode

Samsung's Magician software enables RAPID Mode for up to 2x faster performance* by utilizing unused PC memory (DRAM) as a high-speed cache. The newest version of Samsung Magician supports up to a 4 GB cache on a system with 16 GB of DRAM.

Guaranteed Endurance and reliability

The 850 EVO doubles the endurance and reliability compared to the previous generation 840 EVO and features a class-leading 5 year warranty. With enhanced long-term reliability, the 850 EVO assures longterm dependable performance of up to 30% longer than the previous generation 840 EVO.